首頁 >IRFR110PBF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR110PBF | HEXFET?Power MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni | IRF International Rectifier | IRF | |
IRFR110PBF | Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFR110PBF | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR110PBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號:
IRFR110PBF
- 功能描述:
MOSFET N-Chan 100V 4.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
VISHAY |
2020+ |
TO-252 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
VISHAY/威世 |
21+ |
TO-252 |
6000 |
原裝正品 |
詢價 | ||
VISHAY/威世 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
VISHAY(威世) |
23+ |
TO-252 |
7847 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
17+ |
TO-252 |
6200 |
詢價 | |||
VISHAY |
23+ |
D2Pak |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Vishay |
18+ |
NA |
3001 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
VISHAY |
1735+ |
TO252 |
6528 |
科恒偉業(yè)!只做原裝正品!假一賠十! |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 |
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