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首頁(yè) >IRFR9110TR>規(guī)格書列表

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IRFR9110TR	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110TR	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRA	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRA	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRL	文件：172.32 Kbytes Page：6 Pages	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec	IRF International Rectifier	IRF
IRFR9110TRL	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110TRL	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRLA	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRLA	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRLPBF	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110TRLPbFA	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRLPBFA	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRPBF	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110TRPBFA	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRPbFA	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRL	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRLPBF	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRLPBFA	文件：845.12 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110TRPBF	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110TRPBFA	文件：845.12 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號(hào)：
IRFR9110TR
功能描述：
MOSFET P-Chan 100V 3.1 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市珩瑞科技有限公司	IRFR9110TR	IR	21+	TO-252	6000	原裝正品	詢價(jià)
深圳市博浩通科技有限公司	IRFR9110TR	IR	23+	SOT252	36000	專業(yè)優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRFR9110TR	IR	17+	TO-252	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市華來(lái)深電子有限公司	IRFR9110TR	IR	23+	TO-252	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市鼎欣微電子有限公司	IRFR9110TR	VISHAY/威世	21+	TO-252	30000	只做正品原裝現(xiàn)貨	詢價(jià)
深圳市仟禧電子有限公司	IRFR9110TR	IR/VISHAY	22+	SOT252	20000	保證原裝正品,假一陪十	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	IRFR9110TR	IR	21+	TO-252	8820	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市科雨電子有限公司	IRFR9110TR	VISHAY	1503+	TO-252	3000	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市萊克訊科技有限公司	IRFR9110TR	IR	1923+	TO-252	6896	原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IRFR9110TR	IR	23+	SOT-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)

更多IRFR9110TR供應(yīng)商更新時(shí)間2025-1-9 16:09:00

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