零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR9214 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFR9214 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR9214 | Power MOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9214,SiHFR9214) ?Straightlead(IRFU9214,SiHFU9214) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFR9214 | Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) | IRF International Rectifier | IRF | |
Power MOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9214,SiHFR9214) ?Straightlead(IRFU9214,SiHFU9214) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A ) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthede | IRF International Rectifier | IRF | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細參數
- 型號:
IRFR9214
- 功能描述:
MOSFET P-Chan 250V 2.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO 252 |
161426 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
VISHAY/威世 |
24+ |
TO-252 |
501744 |
免費送樣原盒原包現貨一手渠道聯系 |
詢價 | ||
IR |
24+ |
N/A |
8000 |
全新原裝正品,現貨銷售 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現貨價秒殺全網 |
詢價 | ||
IR |
24+ |
TO-252 |
61 |
詢價 | |||
IR |
23+ |
TO-252 |
35890 |
詢價 | |||
IR |
06+ |
TO-252 |
15000 |
原裝庫存 |
詢價 | ||
IR |
24+ |
原廠封裝 |
367 |
原裝現貨假一罰十 |
詢價 | ||
IR |
23+ |
D-Pak |
8600 |
全新原裝現貨 |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現貨,可開13%稅票 |
詢價 |
相關規(guī)格書
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