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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFU120N	文件：152.65 Kbytes Page：10 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRFU120N	文件：3.73792 Mbytes Page：10 Pages	Surface Mount (IRFR120N)	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120N	文件：247.26 Kbytes Page：2 Pages	Marking:IPAK;Package:TO-251;isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU120NPBF	文件：395.05 Kbytes Page：11 Pages	Fast Switching VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	IRF International Rectifier	IRF
IRFU120NPBF	文件：4.0085 Mbytes Page：10 Pages	Surface Mount (IRFR120N) Straight Lead (IRFU120N) VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120NPBF	文件：1.08076 Mbytes Page：9 Pages	N-Channel 100-V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
IRFU120PBF	文件：2.12101 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.27廓,ID=7.7A)	IRF International Rectifier	IRF
IRFU120PBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU120PBF	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120PBF	文件：838.17 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU120TR	文件：179.46 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str	IRF International Rectifier	IRF
IRFU120Z	文件：263.99 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFU120Z	文件：4.26012 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120Z	文件：247.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU120ZPBF	文件：263.99 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFU120ZPBF	文件：4.27158 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120ZPBF	文件：4.26012 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFY120	文件：14.34 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS	SEME-LAB Seme LAB	SEME-LAB
IRFY120C	文件：15.61 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealed	SEME-LAB Seme LAB	SEME-LAB
IRLD120	文件：169.38 Kbytes Page：6 Pages	POWERMOSFET	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號：
IRFU120N
制造商：
International Rectifier
功能描述：
Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK
功能描述：
MOSFET N I-PAK

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市坤融電子科技有限公司	IRFU120N	IR	24+	TO-251	2500	只做原廠渠道可追溯貨源	詢價
深圳市河鋒鑫科技有限公司	IRFU120N	IR	17+	I-Pak	31518	原裝正品可含稅交易	詢價
柒號芯城電子商務(wù)(深圳)有限公司	IRFU120N	IR	2024+	N/A	70000	柒號只做原裝現(xiàn)貨價秒殺全網(wǎng)	詢價
深圳市昌和盛利電子有限公司	IRFU120N	IR	23+	TO-251	35890		詢價
深圳市一線半導(dǎo)體有限公司	IRFU120N	IR	24+	TO-251	1200		詢價
深圳市星佑電子有限公司	IRFU120N	IR	06+	TO-251	12000	原裝	詢價
深圳市弘為電子有限公司	IRFU120N	IR	24+	原廠封裝	1500	原裝現(xiàn)貨假一罰十	詢價
深圳市博浩通科技有限公司	IRFU120N	IR	23+	TO-251	9500	專業(yè)優(yōu)勢供應(yīng)	詢價
深圳市歐立現(xiàn)代科技有限公司	IRFU120N	ir	24+	N/A	6980	原裝現(xiàn)貨,可開13%稅票	詢價
深圳市鵬和科技有限公司	IRFU120N	IR	24+	TO-251	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價

更多IRFU120N供應(yīng)商更新時間2025-1-15 13:40:00

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