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KF11N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF11N50P

NCHANNELMOSFIELD

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF11N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF11N50P

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF11N50P/F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF11N50PF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF11N50PSLASHF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KSM11N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF11N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

NDF11N50Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.52Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRFY11N50CMASCX

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET N-CH 500V 10A 3PIN TO-257 - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
TO-257AA
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
TO-257AA
8000
只做原裝現(xiàn)貨
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IR
23+
TO-257AA
7000
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IR
18
TO-220
200
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IR
24+
TO-220
66800
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IR
專(zhuān)業(yè)鐵帽
TO-220
67500
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IR
2020+
TO-220
80000
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WSI
CDIP
3647
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InternationRectifer
22+
NA
30000
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IR
QQ咨詢(xún)
TO-220
66
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更多IRFY11N50CMASCX供應(yīng)商 更新時(shí)間2025-2-13 10:00:00