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IRFY430CM

POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY430M

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRGB430

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRGP430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGP430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRK.430

SUPERMAGN-A-pak-TMPowerModules

Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin

IRF

International Rectifier

IRK430

SUPERMAGN-A-PAK??PowerModules

IRF

International Rectifier

ISCNL430W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFY430CM

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AA

  • 功能描述：

    TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
CHINA
23+
TO-257AA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
IR
22+
TO-257AA
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
INFINEON
23+
M-TO257-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價(jià)
IR
23+
TO-257AA
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-257AA
7000
詢價(jià)
SEMELAB
23+
TO-257AA
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
WSI
CDIP
3647
萊克訊每片來自原廠!價(jià)格超越代理!只做進(jìn)口原裝!
 詢價(jià)
IR
2318+
TO-3
4862
只做進(jìn)口原裝!假一賠百!自己庫存價(jià)優(yōu)!
 詢價(jià)
IR
18+
TO
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
更多IRFY430CM供應(yīng)商 更新時(shí)間2025-2-13 9:02:00

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