IRFZ24S中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFZ24S規(guī)格書(shū)詳情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
applications.
Advanced Process Technology
Surface Mount (IRFZ24S)
Low-profile through-hole (IRFZ24L)
175°C Operating Temperature
Fast Switching
產(chǎn)品屬性
- 型號(hào):
IRFZ24S
- 功能描述:
MOSFET N-Chan 60V 17 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
313 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
VISHAY(威世) |
23+ |
TO263 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
IR |
2020+ |
TO-263 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
INTERNATIONALRECTIFIER |
24+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | |||
SILICONIXVISHAY |
23+ |
NA |
25630 |
原裝正品 |
詢價(jià) | ||
VISHAY |
22+23+ |
TO-263 |
28866 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
TO-263 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
SOT-263- |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
SILICONIXVISHAY |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
IR |
23+ |
TO |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售 |
詢價(jià) |