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IRG4BC40WS中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRG4BC40WS
廠商型號

IRG4BC40WS

功能描述

INSULATED GATE BIPOLAR TRANSISTOR

文件大小

343.85 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 19:28:00

IRG4BC40WS規(guī)格書詳情

Features

? Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

? Industry-benchmark switching losses improve

efficiency of all power supply topologies

? 50 reduction of Eoff parameter

? Low IGBT conduction losses

? Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

Benefits

? Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

(hard switched mode)

? Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

? Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

產(chǎn)品屬性

  • 型號:

    IRG4BC40WS

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR

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