首頁>IS41LV16400-60T>規(guī)格書詳情
IS41LV16400-60T中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多IS41LV16400-60T規(guī)格書詳情
DESCRIPTION
The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16400 ideal for use in 16-bit wide data bus systems.
FEATURES
? Extended Data-Out (EDO) Page Mode access cycle
? TTL compatible inputs and outputs; tristate I/O
? Refresh Interval: 4,096 cycles / 64 ms
? Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
? Low Standby power dissipation:
– 1.8mW(max) CMOS Input Level
? Single power supply: 3.3V ± 10
? Byte Write and Byte Read operation via two CAS
? Extended Temperature Range -30oC to 85oC
? Industrail Temperature Range -40oC to 85oC
產(chǎn)品屬性
- 型號：
IS41LV16400-60T
- 制造商：
ISSI
- 制造商全稱：
Integrated Silicon Solution, Inc
- 功能描述：
4Mx16(64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
SOJ24 |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
ISSI |
23+ |
QFP100 |
35890 |
詢價 | |||
ISSI |
24+ |
QFP |
36520 |
一級代理/放心采購 |
詢價 | ||
INTEGRATEDS |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
ISSI |
22+23+ |
SOJ |
47108 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
ISSI |
22+ |
SOJ |
8000 |
原裝正品支持實單 |
詢價 | ||
ISSI |
新 |
12 |
全新原裝 貨期兩周 |
詢價 | |||
ISSI |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
ISSI |
23+ |
SOJ24 |
7000 |
詢價 | |||
ISSI |
23+ |
QFP |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
