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IS43DR81280B

1.8V DDR2 SDRAM

·Single supply voltage of 1.8V ± 0.1V\n·SSTL_18 compatible inputs\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency of 3, 4, 5 or 6\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Off-Chip Driver Impedance Adjustment)\n·ODT (On Die Termination) s;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B

1Gb (x8, x16) DDR2 SDRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25DBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25EBL

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25EBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-3DBI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-3DBL

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-3DBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ?Clockfrequencyupto400MHz ?8internalbanksforconcurrentoperation ?4‐bitprefetcharchitecture ?ProgrammableCASLatency:3,4,5,6and7 ?ProgrammableAdditiveLatency:0,1,2,3,4,5 and6 ?WriteLatency=ReadLatency‐1 ?ProgrammableBurstSequence:Sequential

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

ISSI

IS43DR81280B-25DBLI

Package：60-TFBGA；包裝：卷帶（TR） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS43DR81280B-25DBLI-TR

Package：60-TFBGA；包裝：卷帶（TR） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISSI
23+
BGA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
ISSI
1725+
?
8450
只做原裝進(jìn)口,假一罰十
 詢價(jià)
ISSI
18+
TSOP
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢價(jià)
ISSI
1844+
BGA60
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
ISSI
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ISSI/矽成
1836
DDR2SDRAM/128MX8DDR2/3=u
7215
原裝香港現(xiàn)貨真實(shí)庫(kù)存。低價(jià)
 詢價(jià)
ISSI, Integrated Silicon Solut
21+
BGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
ISSI, Integrated Silicon Solut
24+
60-TWBGA(8x10.5)
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
ISSI
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
ISSI(美國(guó)芯成)
2447
BGA-60
315000
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
更多IS43DR81280B供應(yīng)商 更新時(shí)間2025-8-3 11:10:00

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