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IS45S32200E-7TLA1集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

廠商型號(hào) |
IS45S32200E-7TLA1 |
參數(shù)屬性 | IS45S32200E-7TLA1 封裝/外殼為86-TFSOP(0.400",10.16mm 寬);包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC DRAM 64MBIT PAR 86TSOP II |
功能描述 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
封裝外殼 | 86-TFSOP(0.400",10.16mm 寬) |
文件大小 |
981.35 Kbytes |
頁(yè)面數(shù)量 |
59 頁(yè) |
生產(chǎn)廠商 | Integrated Silicon Solution Inc |
企業(yè)簡(jiǎn)稱 |
ISSI【北京矽成】 |
中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-5-28 19:23:00 |
人工找貨 | IS45S32200E-7TLA1價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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IS45S32200E-7TLA1規(guī)格書詳情
OVERVIEW
ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally confgured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.
FEATURES
? Clock frequency: 200, 166, 143, 133 MHz
? Fully synchronous; all signals referenced to a positive clock edge
? Internal bank for hiding row access/precharge
? Single 3.3V power supply
? LVTTL interface
? Programmable burst length: (1, 2, 4, 8, full page)
? Programmable burst sequence: Sequential/Interleave
? Self refresh modes
? 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
? Random column address every clock cycle
? Programmable CAS latency (2, 3 clocks)
? Burst read/write and burst read/single write operations capability
? Burst termination by burst stop and precharge command
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IS45S32200E-7TLA1
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
托盤
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
DRAM
- 技術(shù):
SDRAM
- 存儲(chǔ)容量:
64Mb(2M x 32)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
3V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
86-TFSOP(0.400",10.16mm 寬)
- 供應(yīng)商器件封裝:
86-TSOP II
- 描述:
IC DRAM 64MBIT PAR 86TSOP II
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
20+ |
TSSOP |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢價(jià) | ||
ISSI |
24+ |
TSOP86 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ISSI |
11+ |
TSOP-86 |
1080 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ISSI |
23+ |
86-TSOPII |
73390 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
ISSI |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | |||
ISSI |
21+ |
TSOP86 |
1709 |
詢價(jià) | |||
ISSI |
23+ |
TSSOP |
28000 |
原裝正品 |
詢價(jià) | ||
ISSI |
25+23+ |
TSOP86 |
10311 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ISSI |
22+ |
TSOP86 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
ISSI |
23+ |
TSSOP |
12800 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) |