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IS45S32200E-7TLA1集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

IS45S32200E-7TLA1
廠商型號(hào)

IS45S32200E-7TLA1

參數(shù)屬性

IS45S32200E-7TLA1 封裝/外殼為86-TFSOP(0.400",10.16mm 寬);包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC DRAM 64MBIT PAR 86TSOP II

功能描述

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

封裝外殼

86-TFSOP(0.400",10.16mm 寬)

文件大小

981.35 Kbytes

頁(yè)面數(shù)量

59 頁(yè)

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡(jiǎn)稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-5-28 19:23:00

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IS45S32200E-7TLA1規(guī)格書詳情

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally confgured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES

? Clock frequency: 200, 166, 143, 133 MHz

? Fully synchronous; all signals referenced to a positive clock edge

? Internal bank for hiding row access/precharge

? Single 3.3V power supply

? LVTTL interface

? Programmable burst length: (1, 2, 4, 8, full page)

? Programmable burst sequence: Sequential/Interleave

? Self refresh modes

? 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)

? Random column address every clock cycle

? Programmable CAS latency (2, 3 clocks)

? Burst read/write and burst read/single write operations capability

? Burst termination by burst stop and precharge command

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IS45S32200E-7TLA1

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    DRAM

  • 技術(shù):

    SDRAM

  • 存儲(chǔ)容量:

    64Mb(2M x 32)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    86-TFSOP(0.400",10.16mm 寬)

  • 供應(yīng)商器件封裝:

    86-TSOP II

  • 描述:

    IC DRAM 64MBIT PAR 86TSOP II

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ISSI
20+
TSSOP
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
詢價(jià)
ISSI
24+
TSOP86
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
ISSI
11+
TSOP-86
1080
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ISSI
23+
86-TSOPII
73390
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
ISSI
三年內(nèi)
1983
只做原裝正品
詢價(jià)
ISSI
21+
TSOP86
1709
詢價(jià)
ISSI
23+
TSSOP
28000
原裝正品
詢價(jià)
ISSI
25+23+
TSOP86
10311
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
ISSI
22+
TSOP86
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價(jià)
ISSI
23+
TSSOP
12800
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
詢價(jià)