首頁>IS61NLP25636>規(guī)格書詳情
IS61NLP25636集成電路(IC)的存儲器規(guī)格書PDF中文資料

廠商型號 |
IS61NLP25636 |
參數(shù)屬性 | IS61NLP25636 封裝/外殼為119-BBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 9MBIT PARALLEL 119PBGA |
功能描述 | 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM |
封裝外殼 | 119-BBGA |
文件大小 |
157 Kbytes |
頁面數(shù)量 |
20 頁 |
生產(chǎn)廠商 | Integrated Silicon Solution Inc |
企業(yè)簡稱 |
ISSI【北京矽成】 |
中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-6-18 22:58:00 |
人工找貨 | IS61NLP25636價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
相關(guān)芯片規(guī)格書
更多- IS61NLP25632
- IS61NLP25618A-200TQI
- IS61NLP25618A-250TQ
- IS61NLP25618A-250B2
- IS61NLP25618A-250TQI
- IS61NLP25618A-250B2I
- IS61NLP25618A-250B3I
- IS61NLP25618A-200B3
- IS61NLP25618A-250B3
- IS61NLP25618A-200TQ
- IS61NLP25618A-200B3I
- IS61NLP25618A-250B3
- IS61NLP25618A-200B3
- IS61NLP25618A-250TQI
- IS61NLP25618A-250B3I
- IS61NLP25618A-200TQI
- IS61NLP25618A-200B3I
- IS61NLP25618A-200B2I
IS61NLP25636規(guī)格書詳情
DESCRIPTION
The 8 Meg NP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES
? 100 percent bus utilization
? No wait cycles between Read and Write
? Internal self-timed write cycle
? Individual Byte Write Control
? Single R/W (Read/Write) control pin
? Clock controlled, registered address, data and control
? Interleaved or linear burst sequence control using MODE input
? Three chip enables for simple depth expansion and address pipelining for TQFP
? Power Down mode
? Common data inputs and data outputs
? CKE pin to enable clock and suspend operation
? JEDEC 100-pin TQFP and 119 PBGA packages
? Single +3.3V power supply (± 5)
? NP Version: 3.3V I/O Supply Voltage
? NLP Version: 2.5V I/O Supply Voltage
? Industrial temperature available
產(chǎn)品屬性
- 產(chǎn)品編號:
IS61NLP25636A-200B2I-TR
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR
- 存儲容量:
9Mb(256K x 36)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
3.135V ~ 3.465V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
119-BBGA
- 供應(yīng)商器件封裝:
119-PBGA(14x22)
- 描述:
IC SRAM 9MBIT PARALLEL 119PBGA
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ISSI |
2016+ |
LQFP-100 |
1980 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ISSI |
23+ |
QFP |
12000 |
全新原裝假一賠十 |
詢價 | ||
ISSI |
24+ |
LQFP-10 |
15000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ISSI |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
ISSI |
22+ |
LQFP-100 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
ISSI(美國芯成) |
2021+ |
TFBGA-165(13x15) |
499 |
詢價 | |||
ISSI |
23+ |
LQFP-100 |
12500 |
全新原裝現(xiàn)貨,假一賠十 |
詢價 | ||
ISSI |
23+ |
BGAQFP |
8659 |
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢. |
詢價 | ||
ISSI |
16+ |
TQFP |
2500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
ISSI |
24+ |
QFP |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 |
相關(guān)庫存
更多- IS61NLP25618A-200TQ
- IS61NLP25618A-250TQ
- IS61NLP25618A-250B2
- IS61NLP25618A-200B3LI
- IS61NLP25618A-200TQLI
- IS61NLP25618A-250B2I
- IS61NLP25618A-200TQLI
- IS61NLP25636A-250TQ
- IS61NLP25636A-200B2
- IS61NLP25636A-250B2I
- IS61NLP25636A
- IS61NLP25636A-250B3
- IS61NLP25636A-200B2I
- IS61NLP25636A-200TQI
- IS61NLP25636A-200B3I
- IS61NLP25636A-200B3
- IS61NLP25636A-250B2
- IS61NLP25636A-200TQ
- IS61NLP25636A-250TQI
- IS61NLP25636A-250B3I