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ISPP11N60C3

N-Channel MOSFET Transistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW11N60C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60C3

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPA11N60C3

iscN-ChannelMOSFETTransistor

?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB11N60C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB11N60C3

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPB11N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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IS
23+
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IS
12
210
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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IS
20+
210
進(jìn)口原裝現(xiàn)貨,假一賠十
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ST
24+
875
詢價(jià)
ST
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
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ST
23+
47403
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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ST
2023+
3000
進(jìn)口原裝現(xiàn)貨
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LATTICE/萊迪斯
23+
QFN
45718
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LATTICE
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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LAT
23+
65480
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更多ISPP11N60C3供應(yīng)商 更新時(shí)間2025-5-14 9:22:00

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