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IXDH30N120

High Voltage IGBT with optional Diode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDH30N120

High Voltage IGBT with optional Diode

IXYS

IXYS Corporation

IXDH30N120

Package:TO-247-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 60A 300W TO247AD

IXYS

IXYS Corporation

IXDH30N120D1

High Voltage IGBT with optional Diode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDH30N120D1

NPT IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.9V@IC=30A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDH30N120D1

High Voltage IGBT with optional Diode

IXYS

IXYS Corporation

IXDH30N120D1

Package:TO-247-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 60A 300W TO247AD

IXYS

IXYS Corporation

IXDR30N120

HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage

HighVoltageIGBTwithoptionalDiodeISOPLUS?package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features ?NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -

IXYS

IXYS Corporation

IXDT30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDT30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IXDH30N120

  • 制造商:

    IXYS

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • IGBT 類型:

    NPT

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.9V @ 15V,30A

  • 開關(guān)能量:

    4.6mJ(開),3.4mJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 測試條件:

    600V,30A,47 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AD

  • 描述:

    IGBT 1200V 60A 300W TO247AD

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
DIP18
6000
15年原裝正品企業(yè)
詢價
24+
8866
詢價
IXYS
23+
TO-247
8600
全新原裝現(xiàn)貨
詢價
IXYS
24+
TO-247
5000
只做原裝公司現(xiàn)貨
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
IXYS
22+23+
TO-247
30670
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
詢價
更多IXDH30N120供應(yīng)商 更新時間2025-1-22 15:00:00