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IXFH20N60Q

HiPerFET Power MOSFETs Q-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS

IXYS

IXYS Corporation

IXFH20N60Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM20N60

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM20N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM20N60

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT20N60Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS

IXYS

IXYS Corporation

IXGA20N60B

HiPerFASTTMIGBT

IXYS

IXYS Corporation

IXGH20N60

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGH20N60A

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGH20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFH20N60Q

  • 功能描述：

    MOSFET 20 Amps 600V 0.35 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS/艾賽斯
23+
TO-247
325680
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
IXYS
24+
原廠封裝
3050
原裝現(xiàn)貨假一罰十
 詢價(jià)
IXYS
1950+
TO-247
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
I
23+
TO-247AD
6000
原裝正品，支持實(shí)單
 詢價(jià)
infineon
2023+
TO-247
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
更多IXFH20N60Q供應(yīng)商 更新時(shí)間2025-1-26 8:00:00

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