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IXFN20N120P

Polar Power MOSFET HiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInductive

IXYS

IXYS Corporation

IXFR20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=630mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFX20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX20N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXGA20N120

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand

IXYS

IXYS Corporation

IXGH20N120

IGBT

VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features ?Internationalstandardpackages JEDECTO-247andTO-268 ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoan

IXYS

IXYS Corporation

IXGH20N120B

HighVoltageIGBT

VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features ?HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers ?Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD ?Lowswitchinglosses,

IXYS

IXYS Corporation

IXGP20N120

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN20N120P

  • 功能描述：

    MOSFET 20 Amps 1200V 0.6 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
SOT-227B
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
19+/20+
SOT-227B
1000
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IXYS/艾賽斯
23+
SOT-227
65493
原裝正品 華強(qiáng)現(xiàn)貨
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IXYS
23+
MOSFETN-CH1200V20ASOT-22
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IXYS
2023+
MODULE
80000
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IXYS
24+
MODULE
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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IXYS
24+
SOT227
564
詢價(jià)
IXYS
1931+
N/A
18
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IXYS
1809+
SOT-227
96
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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IXYS
22+
NA
18
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更多IXFN20N120P供應(yīng)商 更新時(shí)間2025-1-25 10:12:00

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