首頁 >IXSM40N60A>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXSM40N60A | Low VCE(sat) IGBT, High Speed IGBT ShortCircuitSOACapability. 40N60,40N60A | IXYS IXYS Corporation | IXYS | |
HighSpeedIGBT ShortCircuitSOACapability. 40N60,40N60A | IXYS IXYS Corporation | IXYS | ||
KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness. | KECKEC CORPORATION KEC株式會社 | KEC | ||
Highspeedswitching | KECKEC CORPORATION KEC株式會社 | KEC | ||
Highspeedswitching | KECKEC CORPORATION KEC株式會社 | KEC | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
IGBT | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
IGBT Features 600V,40A VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andotherswit | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
HighSpeedSwitching CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFseriesprovideslowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features ?HighSpeedSwitching ?LowSa | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HighSpeedSwitching CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription Fairchild?’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription Fairchild?’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
SGH40N60UF600VPTIGBT GeneralDescription Fairchild?’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild |
詳細參數(shù)
- 型號:
IXSM40N60A
- 功能描述:
IGBT 晶體管 40 Amps 600V
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IXYS |
9836 |
4 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
IXYS |
23+ |
模塊 |
595 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
IXYS |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
IXYS |
2023+ |
MODULE |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IXYS |
24+ |
SOT227 |
2050 |
公司大量全新原裝 正品 隨時可以發(fā)貨 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
MODULE |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IXYSCORPORAT |
05+ |
原廠原裝 |
4218 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IXYS |
24+ |
SOT227 |
269 |
詢價 | |||
IXYS |
22+ |
SOT227 |
8000 |
原裝正品支持實單 |
詢價 |
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