IXSN35N100U1分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊規(guī)格書PDF中文資料

IXSN35N100U1屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由IXYS Corporation制造生產(chǎn)的IXSN35N100U1晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。

High Short Circuit SOA Capability

Features

● International standard package

miniBLOC (ISOTOP) compatible

● Isolation voltage 3000 V~

● 2nd generation HDMOSTM process

- for high short circuit SOA

● Low VCE(sat)

- for minimum on-state conduction

losses

● MOS Gate turn-on

- drive simplicity

● Fast Recovery Epitaxial Diode

(FRED)

- short trr and IRM

● Low collector-to-case capacitance

(< 50 pF)

- reducesd RFI

● Low package inductance (< 10 nH)

- easy to drive and to protect

Applications

● AC motor speed control

● DC servo and robot drives

● DC choppers

● Uninterruptible power supplies (UPS)

● Switch-mode and resonant-mode

power supplies

Advantages

● Space savings

● Easy to mount with 2 screws

● High power density