IXTM20N60中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書

MegaMOS?FET

N-Channel Enhancement Mode

Features

? International standard packages

? Low RDS (on) HDMOSTM process

? Rugged polysilicon gate cell structure

? Low package inductance (< 5 nH)

- easy to drive and to protect

? Fast switching times

Applications

? Switch-mode and resonant-mode power supplies

? Motor control

? Uninterruptible Power Supplies (UPS)

? DC choppers

Advantages

? Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

? Space savings

? High power density