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MDF15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF15N60GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP15N60G

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60G

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MS15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

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