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MSF15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

NGTB15N60EG

IGBT-Short-CircuitRated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N60EG

IGBT-Short-CircuitRated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PSM15N60CT

15A600VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

RLBGB15N60

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLGB15N60CT

IGBT

Features ?600V,15A ?VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLPGB15N60CT

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SGB15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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HUAWEI
TO-220F
22+
6000
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6000
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25000
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HUAWEI
25+
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12300
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華微
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吉林華微
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華微
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50000
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HUAWEI
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9800
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HUAWEI
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89630
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更多JCS15N60FH-O-N-B供應(yīng)商 更新時(shí)間2025-5-26 10:09:00

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