首頁 >JCS1N60RC-O-R-N-A>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM TMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelMosfetTransistor ?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent-ID=1A@TC=25°C ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirements | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Sino-Micr |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
S |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
23+ |
TO-252 |
43231 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
S |
23+ |
TO-252 |
6000 |
原裝正品，支持實單 |
詢價 | ||
SINO-MICRO |
2022+ |
TO-252 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
Sino-Micr |
23+ |
TO-252 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
Sino-Micr |
23+ |
TO-252 |
7000 |
詢價 | |||
HP |
1816+ |
TO-126 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
HP |
22+ |
TO-126 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
吉林華微 |
23+ |
TO-IPAK |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 |
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