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JCS9N50F-O-F-N-B

N-CHANNEL MOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS9N50FT-O-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS9N50RC-O-R-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS9N50T

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS9N50VC-O-V-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

KF9N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=9A

KECKEC CORPORATION

KEC株式會社

KF9N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=9A

KECKEC CORPORATION

KEC株式會社

KQB9N50

500VN-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KSM9N50C

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF9N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MDF9N50

N-ChannelMOSFET500V,9.0A,0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDF9N50BTH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N50BTH

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF9N50F

N-ChannelMOSFET500V,8.0A,0.97ohm

MGCHIP

MagnaChip Semiconductor.

MDF9N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF9N50TH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDP9N50

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N50B

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N50BTH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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