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K4E660412E-TP45規(guī)格書詳情
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung￠s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
? Part Identification
- K4E660412E-JI/P(3.3V, 8K Ref., SOJ)
- K4E640412E-JI/P(3.3V, 4K Ref., SOJ)
- K4E660412E-TI/P(3.3V, 8K Ref., TSOP)
- K4E640412E-TI/P(3.3V, 4K Ref., TSOP)
產(chǎn)品屬性
- 型號：
K4E660412E-TP45
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
16M x 4bit CMOS Dynamic RAM with Extended Data Out
