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K4E661612B-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612B

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612B-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612C

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612C-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612C-T

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612C-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導體

K4E661612D

CMOSDRAM

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

SamsungSamsung semiconductor

三星三星半導體

詳細參數

  • 型號：

    K4E661612B-TC

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    4M x 16bit CMOS Dynamic RAM with Extended Data Out

供應商型號品牌批號封裝庫存備注價格
6000
面議
19
DIP/SMD
 詢價
SAMSUNG
24+
BGA
427
詢價
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SAMSUNG
24+
BGA
2140
全新原裝!現貨特價供應
 詢價
SAMSUNG/三星
23+
BGA
50000
全新原裝正品現貨,支持訂貨
 詢價
SAMSUNG/三星
21+
BGA
10000
原裝現貨假一罰十
 詢價
SAMSUNG/三星
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
SAMSUNG
22+
BGA
8000
原裝正品支持實單
 詢價
SAMSUNG
2023+環(huán)?，F貨
BGA
4425
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
SAMSUNG
2023+
BGA
3000
進口原裝現貨
 詢價
更多K4E661612B-TC供應商 更新時間2025-4-14 13:57:00

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