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K9F2G08U0M中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

K9F2G08U0M
廠商型號(hào)

K9F2G08U0M

功能描述

FLASH MEMORY

文件大小

601.94 Kbytes

頁面數(shù)量

38

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-26 11:41:00

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K9F2G08U0M規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F2GXXQ0M): 1.70V~1.95V

-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit

-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit

- Data Register

-X8 device(K9F2G08X0M): (2K + 64)bit x8bit

-X16 device(K9F2G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit

-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F2G08X0M) : (2K + 64)Byte

-X16 device(K9F2G16X0M) : (1K + 32)Word

- Block Erase

-X8 device(K9F2G08X0M) : (128K + 4K)Byte

-X16 device(K9F2G16X0M) : (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F2G08X0M) : 2K-Byte

- X16 device(K9F2G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)

30ns(Min., K9F2G08U0M only)

產(chǎn)品屬性

  • 型號(hào):

    K9F2G08U0M

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    256M x 8 Bit/128M x 16 Bit/512M x 8 Bit NAND Flash Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
SMG
05+
原廠原裝
1051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
SAMSUNG
23+
TSOP
1600
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
SAMSUNG
23+
TSOP48
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
SAMSUNG
6000
面議
19
DIP
詢價(jià)
SAMSUNG/三星
22+
TSOP48
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價(jià)
SAMSUNG/三星
24+
TSOP-48
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
SAMSUNG
21+
TSSOP
12588
原裝正品,自己庫存 假一罰十
詢價(jià)
SAMSUNG
2020+
TSOP48
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
SAMAUNG
23+
TSOP48
5000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
SAMSANG
19+
TSOP48
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)