首頁 >KF3N50IS-U/HS>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES | KECKEC CORPORATION KEC株式會社 | KEC | ||
500VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
500VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET500V,2.8A,2.5(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.8A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET500V,2.8A,2.5(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,2.8A,2.5(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI |
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