首頁 >KPE-2712SURC>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
HallLatch-HighSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
TOSHIBACCDLinearImageSensorCCD TheTCD2712DGisahighsensitiveandlowdarkcurrent7500 elements?3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7500elements?3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply. | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
ALSProximitySensorModule Features ?Tiny1mmx2mmx0.5mmmodule ?1.8Vpowersupplywith1.8VI2Cbus ?Sleepmode(0.7μA) ?VCSELIRemitter ?Integratedfactorycalibrated940nmIRVCSEL ?Crosstalkandambientlightcancellation ?Wideconfigurationrange ?Highsensitivity ?2channels(photopicALS+IR) | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
TW2710andTW2712SingleBandGNSSAntennas | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2712GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=21mΩMAX.(VGS=?4.5V, | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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