首頁 >LC321000>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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1Mx32-BitDynamicRAMModule2Mx16-BitDynamicRAMModule TheHYM321000S/GS-50/-60isa4MByteDRAMmoduleorganizedas1048576wordsby32-bitina72-pinsingle-in-linepackagecomprisingtwoHYB5118160BSJ1M×16DRAMsin400milwideSOJ-packagesmountedtogetherwithtwo0.2μFceramicdecouplingcapacitorsonaPCboard. AdvancedInformation | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
ULTRALOWNOISEPSEUDOMORPHICHJFET | CEL California Eastern Labs | CEL | ||
CtoKaBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FETCHIP DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialandspaceapplications. FEATURES ?SuperLowNoiseFigure&Hi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialand spaceapplications. FEATURES ?SuperLowNoiseFigure&High | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ULTRALOWNOISEPSEUDOMORPHICHJFET DESCRIPTION NECsNE321000isaHetero-JunctionFETchipthatutilizesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreatehighelectronmobility.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercial,industrialandspaceapplications. NECsstringe | CEL California Eastern Labs | CEL | ||
Water-proofType | ALPSALPS ELECTRIC CO.,LTD. 阿爾卑斯阿爾卑斯電氣株式會(huì)社 | ALPS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
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