LC3564BT-10中文資料三洋數(shù)據(jù)手冊PDF規(guī)格書

Overview

The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current.

Features

? Supply voltage range: 2.7 to 5.5 V

— In 5-V operation mode: 5.0 V ±10

— In 3-V operation mode: 3.0 V ±10

? Address access time (tAA)

— In 5-V operation mode:

LC3564B, BS, BM, and BT-70: 70 ns (max)

LC3564B, BS, BM, and BT-10: 100 ns (max)

— In 3-V operation mode:

LC3564B, BS, BM, and BT-70: 200 ns (max)

LC3564B, BS, BM, and BT-10: 500 ns (max)

? Ultralow standby current

— In 5-V operation mode: 1.0 μA (Ta ≤70°C), 3.0 μA (Ta ≤85°C)

— In 3-V operation mode: 0.8 μA (Ta ≤70°C), 2.5 μA (Ta ≤85°C)

? Operating temperature range

— In 5-V operation mode: –40 to 85°C

— In 3-V operation mode: –40 to 85°C

? Data retention supply voltage: 2.0 to 5.5 V

? All input and output levels:

— In 5-V operation mode: TTL compatible levels

— In 3-V operation mode: VCC –0.2 V/0.2 V

? Three control inputs: OE, CE1, and CE2

? Shared input and output pins, three-state outputs

? No clock required

? Packages

28-pin DIP (600 mil) plastic package: LC3564B

28-pin DIP (300 mil) plastic package: LC3564BS

28-pin SOP (450 mil) plastic package: LC3564BM

28-pin TSOP (8 ×13.4 mm) plastic package: LC3564BT