LH28F004SU-Z9中文資料夏普微數(shù)據(jù)手冊PDF規(guī)格書

INTRODUCTION

Sharp’s LH28F004SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F004SU is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

? 512K × 8 Word Configuration

? 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C)

– No Requirement For DC/DC Converter To Write/Erase

? 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)

? Minimum 2.7 V Read Capability

– 190 ns Maximum Access Time (VCC = 2.7 V, -20°C to +85°C)

– 180 ns Maximum Access Time (VCC = 2.7 V, 0°C to +70°C)

? 32 Independently Lockable Blocks (16K)

? 100,000 Erase Cycles per Block

? Automated Byte Write/Block Erase

– Command User Interface

– Status Register

– RY?/BY? Status Output

? System Performance Enhancement

– Erase Suspend For Read

– Two-Byte Write

– Full Chip Erase

? Data Protection

– Hardware Erase/Write Lockout During Power Transitions

– Software Erase/Write Lockout

? Independently Lockable For Write/Erase On Each Block (Lock Block and Protect Set/Reset)

? 4 μA (Typ.) ICC In CMOS Standby

? 0.2 μA (Typ.) Deep Power-Down

? State-of-the-Art 0.45 μm ETOX? Flash Technology

? Extended Temperature Operation

– -20°C to +85°C (Read)

– +15°C to +35°C (Write/Erase)

? 42-pin, 0.67 mm × 8 mm × 8 mm CSP Package