LHF64P01中文資料夏普微數(shù)據(jù)手冊PDF規(guī)格書

64Mbit (4Mbit×16/8Mbit×8) Page Mode Flash MEMORY

The product, which is Page Mode Flash memory, is a high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPEN=2.7V-3.6V

The product supports high performance page mode. It allows code execution directly from Flash, thus eliminating time consuming wait states.

Fast program capability is provided through the use of high speed Page Buffer Program.

The block locking scheme is available for memory array and this scheme provides maximum flexibility for safe nonvolatile code and data storage.

■ 64-Mbit Density

? Bit Organization ×8/×16

■ High Performance Page Mode Reads for Memory Array

? 120/25ns 4-Word/ 8-Byte Page Mode

■ VCC=2.7V-3.6V Operation

? VCCQ for Input/Output Power Supply Isolation

? Automatic Power Savings Mode reduces ICCR in Static Mode

■ OTP (One Time Program) Block

? 4-Word/ 8-Byte Factory-Programmed Area

? 3963-Word/ 7926-Byte User-Programmable Area

■ High Performance Program with Page Buffer

? 16-Word/ 32-Byte Page Buffer

? Page Buffer Program Time 12.5μs/byte (Typ.)

■ Operating Temperature -40°C to +85°C

■ Symmetrically-Blocked Architecture

? Sixty-four 64-KWord/ 128-KByte Blocks

■ Enhanced Data Protection Features

? Individual Block Lock

? Absolute Protection with VPEN≤VPENLK

? Block Erase, (Page Buffer) Program Lockout during Power Transitions

■ Automated Erase/Program Algorithms

? Program Time 210μs (Typ.)

? Block Erase Time 1s (Typ.)

■ Cross-Compatible Command Support

? Basic Command Set

? Common Flash Interface (CFI)

■ Extended Cycling Capability

? Minimum 100,000 Block Erase Cycles

■ 56-Lead TSOP (Normal Bend)

■ CMOS Process (P-type silicon substrate)

■ ETOXTM* Flash Technology

■ Not designed or rated as radiation hardened