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LPC662IMXSLASHNOPB.B中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

LPC662IMXSLASHNOPB.B
廠商型號(hào)

LPC662IMXSLASHNOPB.B

功能描述

LPC662 Low Power CMOS Dual Operational Amplifier

文件大小

644.1 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱

TI2德州儀器

中文名稱

美國(guó)德州儀器公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-7-11 20:00:00

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LPC662IMXSLASHNOPB.B規(guī)格書詳情

General Description

The LPC662 CMOS Dual operational amplifier is ideal for

operation from a single supply. It features a wide range of

operating voltage from +5V to +15V, rail-to-rail output swing

in addition to an input common-mode range that includes

ground. Performance limitations that have plagued CMOS

amplifiers in the past are not a problem with this design.

Input VOS, drift, and broadband noise as well as voltage gain

(into 100 kW and 5 kW) are all equal to or better than widely

accepted bipolar equivalents, while the power supply

requirement is typically less than 0.5 mW.

This chip is built with National’s advanced Double-Poly

Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational

amplifier and LPC661 for a single CMOS operational

amplifier with these same features.

Applications

n High-impedance buffer

n Precision current-to-voltage converter

n Long-term integrator

n High-impedance preamplifier

n Active filter

n Sample-and-Hold circuit

n Peak detector

Features

n Rail-to-rail output swing

n Micropower operation (<0.5 mW)

n Specified for 100 kW and 5 kW loads

n High voltage gain

n Low input offset voltage

n Low offset voltage drift

n Ultra low input bias current

n Input common-mode includes GND

n Operating range from +5V to +15V

n Low distortion

n Slew rate

n Full military temperature range available

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