M24C02-DRDW3TP集成電路（IC）的存儲器規(guī)格書PDF中文資料

M24C02-DRDW3TP屬于集成電路（IC）的存儲器。由意法半導體集團制造生產(chǎn)的M24C02-DRDW3TP存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The M24C02-A125 is a 2-Kbit serial EEPROM Automotive grade device operating up to 125 °C. The M24C02-A125 is compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 1.

The device is accessed by a simple serial I2C compatible interface running up to 1 MHz.

The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24C02-A125 is a byte-alterable memory (256 × 8 bits) organized as 16 pages of 16 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic.

The M24C02-A125 offers an additional Identification Page (16 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.

Features

? Compatible with all I2C bus modes

– 1 MHz

– 400 kHz

– 100 kHz

? Memory array

– 2 Kbits (256 bytes) of EEPROM

– Page size: 16 bytes

– Additional Write lockable page

(Identification page)

? Extended temperature and voltage ranges

– -40 °C to 125 °C; 1.7 V to 5.5 V

? Schmitt trigger inputs for noise filtering

? Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

? Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 600 k Write cycles at 125 °C

? Data retention

– 50 years at 125 °C

– 100 years at 25 °C

? ESD Protection (Human Body Model)

– 4000 V

? Packages

– RoHS compliant and halogen-free (ECOPACK2?)