M29F800DB70M1T中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Summary description

The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Feature summary

■ Supply voltage

– VCC = 5V ±10 for Program, Erase and Read

■ Access time: 55, 70, 90ns

■ Programming time

– 10μs per Byte/Word typical

■ 19 Memory Blocks

– 1 Boot Block (Top or Bottom location)

– 2 Parameter and 16 Main Blocks

■ Program/Erase controller

– Embedded Byte/Word Program algorithms

■ Erase Suspend and Resume modes

– Read and Program another Block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/batch Programming

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64 bit Security Code

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per Block

■ Electronic Signature

– Manufacturer Code: 0020h

– Top Device Code M29F800DT: 22ECh

– Bottom Device Code M29F800DB: 2258h