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M36DR432B100ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M36DR432B100ZA6T
廠商型號

M36DR432B100ZA6T

功能描述

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

文件大小

328.77 Kbytes

頁面數(shù)量

46

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-4-4 13:30:00

人工找貨

M36DR432B100ZA6T價格和庫存,歡迎聯(lián)系客服免費人工找貨

M36DR432B100ZA6T規(guī)格書詳情

DESCRIPTION

The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.65V to 2.2V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 100,120ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36DR432A: 00A0h

– Bottom Device Code, M36DR432B: 00A1h

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ ASYNCRONOUS PAGE MODE READ

– Page width: 4 Word

– Page Mode Access Time: 35ns

■ DUAL BANK OPERATION

– Read within one Bank while Program or Erase within the other

– No Delay between Read and Write Operations

■ BLOCK PROTECTION ON ALL BLOCKS

– WPF for Block Locking

■ COMMON FLASH INTERFACE

– 64 bit Security Code

SRAM

■ 4 Mbit (256K x 16 bit)

■ LOW VDDS DATA RETENTION: 1V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

產(chǎn)品屬性

  • 型號:

    M36DR432B100ZA6T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

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