M58WR064ET70ZB6T集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

M58WR064ET70ZB6T屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M58WR064ET70ZB6T存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 1.65V to 2.2V for Program, Erase and Read

– VDDQ = 1.65V to 3.3V for I/O Buffers

– VPP = 12V for fast Program (optional)

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 54MHz

– Asynchronous/ Synchronous Page Read mode

– Random Access: 70, 80, 100 ns

■ PROGRAMMING TIME

– 8μs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in others

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58WR064ET: 8810h

– Bottom Device Code, M58WR064EB: 8811h