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MURT20010R

SiliconSuperFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

MV20010

GaAsVaractorDiodesAbruptJunction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

MicrosemiMicrosemi Corporation

美高森美美高森美公司

PD20010-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD20010S-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD20010STR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD20010TR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PNE20010ER

200V,1Ahyperfastrecoveryrectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PNE20010ER-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinasmallandflatleadSOD123WSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?ReversevoltageVR≤200V ?ForwardcurrentIF≤1A ?Hyp

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PNE20010EXD

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PNE20010EXD-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Maxim
22+
20-WFQFN
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Analog Devices Inc./Maxim Inte
25+
20-WFQFN 裸露焊盤
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
Maxim
10000
只做正品
詢價(jià)
MAXIM/美信
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源!
詢價(jià)
MAXIM/美信
25+
原廠封裝
10280
詢價(jià)
原廠原裝
22+
MAXIM INTEGRATED PRODUCTS
12000
原裝正品現(xiàn)貨,可出樣品可開稅票
詢價(jià)
Maxim
25+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價(jià)
MAXIM/美信
23+
TQFN-20
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
MAXIM/美信
23+
TQFN-20
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
MAXIM/美信
2022+
TQFN-20
48000
只做原裝,絕對(duì)原裝,假一罰十
詢價(jià)
更多MAX20010DATPOV供應(yīng)商 更新時(shí)間2025-7-9 15:00:00