首頁(yè) >MAX6003EUR-T>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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MAX6003EUR-T | Low-Cost, Low-Power, Low-Dropout, SOT23-3 Voltage References GeneralDescription TheMAX6001–MAX6005familyofSOT23,low-costseriesvoltagereferencesmeetsthecostadvantageofshuntreferencesandoffersthepower-savingadvantageofseriesreferences,whichtraditionallycostmore.Unlikeconventionalshunt-mode(two-terminal)referencesthatmustbe | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | |
MAX6003EUR-T | 包裝:卷帶(TR) 封裝/外殼:TO-236-3,SC-59,SOT-23-3 類別:集成電路(IC) 電壓基準(zhǔn) 描述:IC VREF SERIES 1% SOT23-3 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | |
COMPLEMENTARYDUAL | SEME-LAB Seme LAB | SEME-LAB | ||
DualTransistors DualTransistors TO-78Case(Continued) | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | ||
MonolithicFlyback/SEPICDC-DCConverter | MPSMonolithic Power Systems Inc. 美國(guó)芯源美國(guó)芯源系統(tǒng)有限公司 | MPS | ||
MonolithicFlyback/SEPICDC-DCConverter | MPSMonolithic Power Systems Inc. 美國(guó)芯源美國(guó)芯源系統(tǒng)有限公司 | MPS | ||
MonolithicFlyback/ForwardDC-DCConverterEvaluationBoard | MPSMonolithic Power Systems Inc. 美國(guó)芯源美國(guó)芯源系統(tǒng)有限公司 | MPS | ||
ExpandableFanlessEmbeddedComputer | AdlinkAdlink Technology Inc. 凌華科技凌華科技股份有限公司 | Adlink | ||
N-channelMOSFET600V,2A,4.4Ω Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) ?Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) ?Highcurrent ID(DC)=±2.0 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
LCEN-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6003XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
2Ports100GbEQSFP28NetworkMezzanineCard Features ?SinglehostNICsolutionbyusingIntelE810-CAM2 ?Overlaynetworkssupport:VxLAN&NVGRE ?CPUoffload:TSO,LRO,GRO ?Jumboframesupport(9.6KB) ?CompatiblewithFWA-5070,FWA-6070Platform | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國(guó))有限公司 | ADVANTECH |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MAX6003EUR-T
- 制造商:
Analog Devices Inc./Maxim Integrated
- 類別:
集成電路(IC) > 電壓基準(zhǔn)
- 包裝:
卷帶(TR)
- 參考類型:
系列
- 輸出類型:
固定
- 電壓 - 輸出(最小值/固定):
3V
- 容差:
±1%
- 溫度系數(shù):
100ppm/°C
- 噪聲 - 0.1Hz 至 10Hz:
75μVp-p
- 噪聲 - 10Hz 至 10Hz:
150μVrms
- 電壓 - 輸入:
3.2V ~ 12.6V
- 電流 - 供電:
45μA
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-236-3,SC-59,SOT-23-3
- 供應(yīng)商器件封裝:
SOT-23-3
- 描述:
IC VREF SERIES 1% SOT23-3
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MAXIM |
22+ |
3500 |
福安甌為您提供真芯庫(kù)存,真誠(chéng)服務(wù) |
詢價(jià) | |||
24+ |
SOP23 |
3000 |
公司現(xiàn)貨 |
詢價(jià) | |||
MAXIM |
23+ |
原廠封裝 |
4963 |
詢價(jià) | |||
MAXIM |
24+ |
2978 |
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時(shí)可發(fā)貨 |
詢價(jià) | |||
MAXIM |
23+ |
DIP14 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
MAXIM |
24+ |
TO223/3 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
MAXIM |
2020+ |
TO223/3 |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
MAX(美信) |
2020+ |
原廠封裝 |
35000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
MAXIM |
23+ |
NA |
25060 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
MAXIM |
19+ |
SOT23-3 |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) |
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