首頁 >MAX6306ECK>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
5-Pin,Multiple-Input,ProgrammableResetICs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
5-Pin,Multiple-Input,ProgrammableResetICs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
P-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
MCH6306 General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?4Vdrive. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
650V20AInsulatedGateBipolarTransistor | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
N-Channel30V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
NATIONALAEROSPACESTANDARD | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
LASERDIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6306Seriesisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitor PIN-PD.ThisdeviceisidealforGigabitEthernetandSynchronousDigital Hi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS | CEL California Eastern Labs | CEL | ||
1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR155Mb/sand622Mb/sAPPLICATIONS | CEL California Eastern Labs | CEL |
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