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MJ802G

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE802

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJE802

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJE802

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE802

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE802

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    MAX802MESA-T

  • 功能描述：

    監(jiān)控電路

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 輸出類型：

    Active Low, Open Drain

  • 人工復(fù)位：

    Resettable

  • 監(jiān)視器：

    No Watchdog

  • 電池備用開關(guān)：

    No Backup

  • 上電復(fù)位延遲（典型值）：

    10 s

  • 電源電壓-最大：

    5.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    UDFN-6

  • 封裝：

    Reel

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MAX
24+
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2250
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3000
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MAX
22+
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8200
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MAXIM/美信
SOP
210708
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MAXIM
05+
原廠原裝
4666
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MAXIM
23+
NA
25060
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MAXIM
13+
PDIP
3758
原裝分銷
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MaximIntegrated
24+
8-PDIP
66800
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Maxim Integrated
24+
8-PDIP
65200
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Maxim
24+
8-DIP
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
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更多MAX802MESA-T供應(yīng)商 更新時間2025-4-10 16:45:00

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