首頁 >MAX890LESATR-LF>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HighTjmLowIRRMSchottkyBarrierDiodes | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
SchottkyBarrierChip Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Isolated8.0AMPS.SchottkyBarrierRectifiers VoltageRange30to100VoltsCurrent8.0Amperes Features ?PlasticmaterialusedcarriesUnderwritersLaboratory Classifications94V-0 ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Highcurrentcapability,lowforwardvoltagedrop ?Highsurg | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | TSC | ||
8.0AMPS.IsolatedSchottkyBarrierRectifiers | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | TSC | ||
DualCommonCathodeSchottkyRectifier | TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司 | TSC | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASIMRF890isDesignedforUHFClassAAmplifierApplicationsinCellularBaseStationEquipment. FEATURES: ?Pg=9.0dBmin.@900MHz ?P1dB=2.0Wattsmin.at900MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
NPNSILICONRFPOWERTRANSISTOR | ASI Advanced Semiconductor | ASI | ||
8AmpSchottkyRectifier 8AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●175°CJunctionTemperature ●HighCurrentCapability ●VRRM80to100Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
8ASCHOTTKYRECTIFIER | DIGITRON Digitron Semiconductors | DIGITRON | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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