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MC-4516CD64ES-A10B中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MC-4516CD64ES-A10B
廠商型號(hào)

MC-4516CD64ES-A10B

功能描述

16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

文件大小

130 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡(jiǎn)稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-6-14 11:10:00

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MC-4516CD64ES-A10B規(guī)格書(shū)詳情

Description

The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: μPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

? 16,777,216 words by 64 bits organization

? Clock frequency and access time from CLK

? Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

? Pulsed interface

? Possible to assert random column address in every cycle

? Quad internal banks controlled by BA0, BA1 (Bank Select)

? Programmable burst-length (1, 2, 4, 8 and Full Page)

? Programmable wrap sequence (Sequential / Interleave)

? Programmable /CAS latency (2, 3)

? Automatic precharge and controlled precharge

? CBR (Auto) refresh and self refresh

? Single 3.3V ± 0.3V power supply

? LVTTL compatible

? 4,096 refresh cycles/64 ms

? Burst termination by Burst Stop command and Precharge command

? 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

? Unbuffered type

? Serial PD

產(chǎn)品屬性

  • 型號(hào):

    MC-4516CD64ES-A10B

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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