首頁 >MC1433CG>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Lithium-IonBatteryChargeControl(1to2cells) Outline ThisICisusedtocontrolchargingoflithium-ionbatteries.ThisoneICincorporatesfunctionsforconstantcurrentandconstant-voltagechargingandforprecharging,foranoverchargetimer,batterytemperaturedetection,andotherprotectivefunctions.Itwasdevelopedbyaddingtoth | MITSUMIMitsumi Electronics, Corp. 三美三美電機株式會社 | MITSUMI | ||
ICforControlofLithium-ionBatteriesCharging Outline ThisICisusedtocontrolchargingoflithium-ionbatteries.Itisaone-chipchargecontrolICwheretheprotectioncircuitincorporatesconstant-current/constant-voltagechargeandprecharge,overchargetimer,andbatterytemperaturedetectionfunctions.Itwasdevelopedbyaddingthe | MITSUMIMitsumi Electronics, Corp. 三美三美電機株式會社 | MITSUMI | ||
Lithium-IonBatteryChargeControl(1to2cells) Outline ThisICisusedtocontrolchargingoflithium-ionbatteries.ThisoneICincorporatesfunctionsforconstantcurrentandconstant-voltagechargingandforprecharging,foranoverchargetimer,batterytemperaturedetection,andotherprotectivefunctions.Itwasdevelopedbyaddingtoth | MITSUMIMitsumi Electronics, Corp. 三美三美電機株式會社 | MITSUMI | ||
SMTVoltageControlledOscillator | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成電路河北博威集成電路有限公司 | BOWEI | ||
IntegratedCircuitAudioPreamp Description: TheNTE1433isalinearintegratedcircuitina7–LeadSIPtypepackagedesignedforuseinhighvoltagepreamplificationapplications. Features: ?PowerSupplywithWideWorkingVoltageRange(20–42Volts) ?HighOpenLoopGain ?ExtremelyLowDistortion ?LowNoi | NTE NTE Electronics | NTE | ||
General-PurposeSwitchingDeviceApplications N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features ?1.8Vdrive. ?Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
SingleN-ChannelPowerMOSFET Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultralowonresistancerequirements. Features ? | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultralowonresistancerequirements. Features ? | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultralowonresistancerequirements. Features ? | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
RF&MICROWAVETRANSISTORSUHFMOBILEAPPLICATIONS HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2 | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
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