首頁 >MC1435G>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IntegratedCircuitDualAudioPreamp Description: TheNTE1435isanintegratedcircuitina9–LeadSIPtypepackagedesignedforpreampapplicationsincorporatingtwochannelssuchascarstereoapplications.Withstabilizedpowersourcebuilt–in,thisdeviceoffershighgain,lowdistortion,lownoise,andhighoutputvoltage. | NTE NTE Electronics | NTE | ||
SKTCAPSCREWM12X180(PK5) | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
SingleN-ChannelPowerMOSFET PowerMOSFET30V,89m?,3A,SingleN-Channel Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultr | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features ?1.8Vdrive. ?Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
SingleN-ChannelPowerMOSFET PowerMOSFET30V,89m?,3A,SingleN-Channel Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultr | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET PowerMOSFET30V,89m?,3A,SingleN-Channel Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultr | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel40V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI |
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