MGP7N60ED中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
MGP7N60ED規(guī)格書詳情
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 70 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V
? Low On–Voltage 2.0 V typical at 5.0 A, 125°C
? Soft Recovery Free Wheeling Diode is Included in the Package
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號(hào)：
MGP7N60ED
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RAYCHEM |
24+ |
SMD |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
RAYCHEM |
SMD |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
TE/泰科 |
2420+ |
/ |
127845 |
一級(jí)代理,原裝正品! |
詢價(jià) | ||
2017+ |
SMD |
6528 |
只做原裝正品假一賠十! |
詢價(jià) | |||
ON/安森美 |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ON/安森美 |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
ON |
24+ |
90000 |
詢價(jià) | ||||
SMC Corporation |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
SMC |
2306+ |
NA |
6680 |
原裝正品公司現(xiàn)貨,實(shí)單來談 |
詢價(jià) |
