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MJE271

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

ComplementarySiliconPowerTransistors ...designedspecificallyforusewiththeMC3419Solid–StateSubscriberLoopInterfaceCircuit(SLIC). ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A—TO–126 ?Collector–EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDC

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE271

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

ComplementarySiliconPowerTransistors Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE271

NPN PLASTIC POWER TRANSISTOR

MJE270NPNPLASTICPOWERTRANSISTOR MJE271PNPPLASTICPOWERTRANSISTOR MediumPowerDarlingtonsforLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

MJE271

PLASTIC POWER TRANSISTOR

CDIL

Continental Device India Limited

MJE271

Package:TO-225AA,TO-126-3;包裝:托盤 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS PNP DARL 100V 2A TO126

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE271G

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

ComplementarySiliconPowerTransistors Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE271G

Complementary Silicon Power Transistors

ComplementarySiliconPowerTransistors Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?TheseDevicesarePb?FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE271G

Complementary Silicon Power Transistors

Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE271G

Package:TO-225AA,TO-126-3;包裝:托盤 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS PNP DARL 100V 2A TO126

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MMBFJ271

P-ChannelSwitch

Features ?Thisdeviceisdesignedforlowlevelanalogswitchingsampleandholdcircuitsandchopperstabilizedamplifiers. ?Sourcedfromprocess88.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

晶體管資料

  • 型號:

    MJE271

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+Darl

  • 性質(zhì):

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    >6MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BDT60B...C,BDW54C...D,2SD751B,

  • 最大耗散功率:

    15W

  • 放大倍數(shù):

    β>1500

  • 圖片代號:

    B-21

  • vtest:

    100

  • htest:

    6000100

  • atest:

    2

  • wtest:

    15

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MJE271

  • 制造商:

    onsemi

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    托盤

  • 晶體管類型:

    PNP - 達林頓

  • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

    3V @ 1.2mA,120mA

  • 電流 - 集電極截止(最大值):

    1mA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    1500 @ 120mA,10V

  • 頻率 - 躍遷:

    6MHz

  • 工作溫度:

    -65°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-225AA,TO-126-3

  • 供應商器件封裝:

    TO-126

  • 描述:

    TRANS PNP DARL 100V 2A TO126

供應商型號品牌批號封裝庫存備注價格
MOT
2021+
TO-126
6800
原廠原裝,歡迎咨詢
詢價
ON
24+
N/A
5000
公司存貨
詢價
MOT
00+
TO-126
35
原裝
詢價
ON
23+
TO-126
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
MOT
2020+
TO-126
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
MOTOROLA/摩托羅拉
24+
TO-220
12500
原裝正品現(xiàn)貨
詢價
ON
24+
TO-126
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
MOTOROLA/摩托羅拉
23+
TO-225AATO-126
24190
原裝正品代理渠道價格優(yōu)勢
詢價
22+
TO126
20000
保證原裝正品,假一陪十
詢價
ON/安森美
23+
TO126
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多MJE271供應商 更新時間2025-1-25 9:30:00