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MTZJ3.3D

MTZJSERIESZENERDIODES

MTZJSERIESZENERDIODES

LRCLeshan Radio Company

樂(lè)山無(wú)線(xiàn)電樂(lè)山無(wú)線(xiàn)電股份有限公司

NNCD3.3A

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES400mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(400mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3B

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES500mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(500mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3C

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES150mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(150mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3D

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3DA

ELECTROSTATICDISCHARGENOISECLIPPINGDIODE2-PINSUPERMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODE 2-PINSUPERMINIMOLD DESCRIPTION TheseproductsarethediodedevelopedforESD(ElectrostaticDischarge)noiseprotection.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingits

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NNCD3.3E

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3F

ELECTROSTATICDISCHARGENOISECLIPPINGDIODESDOUBLETYPE,ANODECOMMON3PINMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(DOUBLETYPE,ANODECOMMON) 3PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofno

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3G

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5PINMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE) 5PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceof

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

OBR3.3SA-U

6WOpenFrame

ETA-USA

eta-usa

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LEIDITECH(雷卯)
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96
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宏微
2022+
2500
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MACMIC
23+
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5000
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MACMIC
24+
MODULE
1000
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宏微
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module
6000
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宏微
23+
13000
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2100
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更多MMF3.3A供應(yīng)商 更新時(shí)間2025-5-29 14:01:00

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