MMFT3055V

TMOS POWER FET 1.7 AMPERES 60 VOLTS

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices

MMFT3055V

Power MOSFET

MMFT3055V

TMOS POWER FET 1.7 AMPERES 60 VOLTS

恩XP

MMFT3055VL

TMOS POWER FET 1.5 AMPERES 60 VOLT

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.

MMFT3055VLT3

TMOS POWER FET 1.5 AMPERES 60 VOLTS RDS(on) = 0.140 OHM

TMOS V? SOT-223 for Surface Mount\nN–Channel Enhancement–Mode Silicon GateTMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as w;

恩XP

MMFT3055VT1

TMOS POWER FET 1.7 AMPERES 60 VOLTS RDS(on) = 0.130 OHM

TMOS V? SOT-223 for Surface Mount\nN–Channel Enhancement–Mode Silicon GateTMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as ;

恩XP

MMFT3055VL

Power MOSFET

MMFT3055VLT1

Power MOSFET

MMFT3055VLT3

Power MOSFET

MMFT3055VT1

Power MOSFET