MMRF1305H

1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitab; ? Wide Operating Frequency Range\n? Extremely Rugged\n? Unmatched, Capable of Very Broadband Operation\n? Integrated Stability Enhancements\n? Low Thermal Resistance\n? Integrated ESD Protection Circuitry\n? RoHS Compliant\n? In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.\n?;

恩XP

MMRF1305H

RF Power LDMOS Transistors

恩XP

MMRF1305HS

Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitab; ? Wide Operating Frequency Range\n? Extremely Rugged\n? Unmatched, Capable of Very Broadband Operation\n? Integrated Stability Enhancements\n? Low Thermal Resistance\n? Integrated ESD Protection Circuitry\n? RoHS Compliant\n? In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.\n?;

恩XP

MMRF1305HR5

RF Power LDMOS Transistors

恩XP

MMRF1305HSR5

RF Power LDMOS Transistors

恩XP